The plasticity at room temperature of intrinsic, n- and p-doped GaAs single crystals has been studied in uniaxial compression under a confining pressure of 1 4 GPa. The n-type crystals were found to be softer than intrinsic or p-type crystals, in contrast to previously reported experiments carried out at intermediate temperatures. This feature can be related to the deformation substructure which exhibits long screw dislocation segments and evidence of cross slip. Microtwinning was also observed as well as large dissociation widths.
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Rabier et al. (1985) studied this question.
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