Photoconductivity in Plastically Deformed GaAs

Spectral response and decay process of photoconductivity were measured in plastically bent n-GaAs having room temperature carrier concentration of 10 16 cm -3 . Two independent decay processes were observed; one appeared with the excitation energy higher than 0.7 eV and the other with the excitation energy higher than 0.9 eV. The former has shorter decay time than the latter. Results are analyzed by the model of recombination at dislocations. Two kinds of dislocation levels are found to exist at the positions 0.7 eV and 0.9 eV below the conduction band edge. These are considered to be associated with two kinds of partial dislocations which constitute 60°-As dislocation.