We report on high-resolution linewidth measurements of proton-implanted InGaAs-GaAs VCSELs employing the delayed self-heterodyne method. Devices with 16-μm active diameter exhibit record low linewidths of 20 MHz and 4-MHz residual linewidth. The linewidth enhancement factor is accurately determined from the ratio of induced phase to amplitude modulation indexes.
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Schmid et al. (1996) studied this question.
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