The fabrication of planar, proton implanted vertical-cavity lasers (VCSELs) with low threshold voltages of 1.8 V and high wallplug efficiencies of 17.6% for top surface emission is reported. The maximum output power of 25 µm devices is 12.5 mW. Layer structures containing simple single-step graded AlGaAs-GaAs Bragg reflectors were grown by solid source molecular beam epitaxy with beryllium as p-type dopant.
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Zeeb et al. (1995) studied this question.
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