Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7 V have been fabricated. The resistance area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3 mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO2/Si3N4 to complete the laser cavity.
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Scherer et al. (1992) studied this question.
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