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An electrically pumped nitrogen doped p-type ZnO nanowires/undoped n-type ZnO thin film homojunction random laser with a 10-period SiO2/SiNx distributed Bragg reflector is demonstrated. The formation of p-n homojunction is confirmed by the current-voltage and photocurrent characteristics. The random lasing behaviors with a low threshold of around 3 mA are observed. The output power is measured to be 220 nW at a drive current of 16 mA.
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Huang et al. (2014) studied this question.
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