The monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodiode has been achieved successfully by using one step liquid phase epitaxial growth. Only a single laser beam is emitted vertically from the substrate through the nearby 45° reflector. The highest output power achieved is 22 mW and the threshold current density is 1.92 kA/cm2. The ratio between photocurrent of the detector and the output power of laser diode is 0.32 μA/mW for the type I device and 1 μA/mW for the type II device.
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Chen et al. (1991) studied this question.
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