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Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in atomic level. The results demonstrated the potentiality of highvoltage, high‐resolution electron microscopy for the study of atomic configurations of structural defects.
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Hiraga et al. (1982) studied this question.
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