Grain boundaries in silicon with a predetermined orientation have been prepared by the sintering of two single crystals. A combination of standard transmission electron microscopy and lattice imaging was used to investigate the Structure of the boundaries produced. Low–angle grain boundaries on {100} and {111} planes, and twin boundaries on {111} planes are discussed in detail.
No takes yet. Share an insight, caveat, or question.
Föll et al. (1979) studied this question.