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May 1, 1979Journal of Applied Physics

Transmission electron microscopy study of microdefects in dislocation-free GaAs and InP crystals

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TKTaibun KamejimaNTT Basic Research LaboratoriesJMJunji MatsuiUniversity of HyogoYSYasuo SekiShowa General Hospital

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Kamejima et al. (1979) studied this question.

synapsesocial.com/papers/6a879d85c61ffc033ad336dbhttps://doi.org/10.1063/1.326372
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical and electron microscope studies of the annealing of tellurium-doped gallium arsenide1971 · 36 citations
  2. 2Impurity effect on the growth of dislocation-free InP single crystals1976 · 77 citations
  3. 3Observations Concerning Radiative Efficiency and Deep-Level Luminescence in <i>n</i>-Type GaAs Prepared by Liquid-Phase Epitaxy1968 · 57 citations