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The dissociation widths of extended dislocations in CdTe, CdS and ZnTe have been measured using the weak-beam technique of electron microscopy, for α and β dislocations separately. Values of the stacking-fault energies have been determined. The experimental results agree with the modified ionic charge model of dislocations in the II–VI semiconductors, and not with the pure ionic model.
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And et al. (1986) studied this question.
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