Defect‐Induced Optical Absorption near the Electronic Band Edge of Tellurium

Because of the plasticity of tellurium at room temperature many physical properties are strongly influenced by the preparation technique. Systematical inquiries about the influence of dislocations on the optical constants near the electronic band edge of tellurium are reported. Comparison of the absorption spectra of samples in which defined dislocations had been introduced by plastic deformation clearly shows that these defects cause sharp absorption lines near the electronic band edge. Models for the interpretation of the absorption mechanism are discussed.