Dislocation Energy Level in Silicon From Dislocation Velocity Measurements

The energy of the dislocation acceptor level in silicon has been determined from dislocation velocity measurements in n-doped silicon using a model proposed earlier, in which the velocity is proportional to the charge on a dislocation. The dislocation level Es = 1.2±.2 eV above the valence band lies close to the conduction band edge in silicon. The proximity of Es to the conduction band is consistent with the observation that p doping at levels as high as 8 × 1019 cm−3 of acceptors has little or no influence on dislocation velocity.