A Classification of the Dislocation‐Related Photoluminescencence in Silicon

The photoluminescence (PL) spectra of the basic extended defects in Si are obtained. A new classification of the PL lines is proposed according to the squared edge components of the Burger's vectors of the dislocations which surround the structural defects. The different manifold splitting of the various dislocation‐related PL lines are predicted for external perturbations violating the crystal symmetry. The possibility of the passivation of these dislocation cores by transition metal impurities is also discussed.