Optical excitation of dislocation states in germanium. II. Analysis of the experimental results

Experimental excitation spectra of edge dislocations in germanium are analysed in terms of one-dimensional dislocation states. A half-filled one dimensional energy band is used successfully in the quantitative analysis of Hall effect- and mobility measurements in dislocated germanium and silicon. The characteristic parameters of this “primary” dislocation band are determined as well as those of secondary dislocation bands that are not electrically active in thermal equilibrium but contribute to photo-conductivity.