Optical excitation of dislocation states in germanium. I. Experiments

Electronic states at edge dislocations in germanium are investigated by photo-conductivity measurements. Using a new technique of axial illumination the contribution of surfaces is suppressed which is difficult to separate from the dislocation effects otherwise. Furthermore, using a special analysis of the signals, true excitation spectra are derived of dislocation states from the data without the use of any recombination models.