Transient and steady-state extrinsic photoconductivity as well as the influence of background illumination on this photoconductivity are studied in plastically bent n-type germanium. Photoconductivity with logarithmic decay is observed for interband excitation. For extrinsic excitation besides the logarithmic-type photoconductivity a fast process appears. Under background illumination quenching of intrinsic photoconductivity is observed in all measured n-type germanium samples. It is shown that the photoconductivity down to a photon-energy of 0.2 eV is connected with edge dislocations. The observed effects are explained in terms of the barrier model of dislocations.
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E. Kamieniecki (1971) studied this question.
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