Effects of dislocations on the properties of metal SiO2-silicon capacitors

The effects of dislocations on the SiO2/Si interface have been studied at dislocation levels of from 104 to 109/cm2. At dislocation levels of 106/cm2 or less the MOS properties are unaffected; at levels from 107 to 109/cm2 the flat-band voltage increases with dislocation density to the point where it is not measurable at 109 dislocations/cm2, being greater than the SiO2 breakdown voltage. No effects on the interface state density are seen.