Measurements of Al-AlInAs Schottky barriers prepared in situ by molecular beam epitaxy

Aluminum was deposited in situ on high crystalline quality n-doped AlInAs grown by molecular beam epitaxy. The current versus voltage characteristics yielded an ideality factor better than 1.05. A barrier height of 0.55±0.01 eV was found, as determined from capacitance versus voltage and current versus temperature (I-T) measurements. The agreement between the two measurements was excellent. Furthermore, evidence is given here that inhomogeneities of the crystal matrix, as observed by four crystal-six reflection x-ray diffraction, result in anomalous I-T characteristics.