The effects of surface pretreatment and a variety of metallisation techniques on the characteristics of Schottky diodes fabricated on Al x In 1-x As grown by low-pressure and atmospheric-pressure MOCVD have been investigated. Barrier heights have been determined from I-V, C-V and I-T measurements and have been found to be in good agreement. Barrier heights of about 0.69 eV were measured for Al 0.48 In 0.52 As using Pt as the Schottky barrier contact.
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Hodson et al. (1988) studied this question.
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