Strained-layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy

InSb/GaSb quantum well structures have been prepared by atmospheric pressure metalorganic vapor phase epitaxy. Strong sharp photoluminescence emission peaks with a full width at half- maximum of 6–11 meV were obtained for the quantum well structures with well thicknesses of 0.35–0.88 nm, suggesting nearly atomically planar interfaces. The observed photoluminescence transition energies are in excellent agreement with the calculated values using a standard finite square well model taking into account strain. A broadening of the predominant photoluminescence emission peak was observed for quantum well structures with well thicknesses above 1 nm, indicating nonplanar growth.