In the presence of shallow attractive traps, the galvanomagnetic effects of the nonequilibrium carriers are investigated for compensated nonpolar semiconductors at low lattice temperatures when the free carrier loses momentum and energy, respectively, by scattering from a system of randomly oriented dipoles and deformation acoustic phonons. Numerical calculations are made for n-Ge at liquid-helium temperature. It is shown that the results are useful for the determination of some capture parameters and for an estimation of the degree of compensation in the material.
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D.P. Bhattacharya (1981) studied this question.
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