Measurements of the Distribution of Defect Introduction Rate with Depth in Silicon Irradiated with 300-keV Electrons

The potentialities of a silicon field effect device, having ac and dc fields superimposed on the gate terminals, are investigated for determining the distribution of defect introduction rate with depth. In particular this device is designed for examining defect introduction mechanisms near threshold energies. In these preliminary experiments, 300-keV electrons are incident on devices made from 600-Ω·cm float-zone silicon. When correction is applied for the proximity of the Fermi level to the Ec−0.4-eV defect level, a distribution of a form similar to that obtained by Flicker and Loferski for 500-keV electrons is obtained.