We present calculations based on an ensemble Monte Carlo program of the steady-state electron and hole drift velocities in bulk Ga0.52In0.48P and Al0.26Ga0.26In0.48P as well as present a list of material parameters for these substances which are of use in the modeling of semiconductor devices made from these material types. The calculations are made including a realistic treatment of both the conduction and valence energy bands based on the k*p method. All of the principal phonon scattering agents are included in our simulation as well.
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Brennan et al. (1992) studied this question.
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