Molecular beam epitaxial growth of InGaAlP on (100) GaAs

InGaAlP epitaxial layers that are lattice matched to (100) GaAs substrates have been successfully grown for the first time by molecular beam epitaxy. The surface of the grown crystal is mirror smooth, and the full width at half-maximum of the double crystal x-ray diffraction pattern is less than 100 sec. The energy gap at the Γ point increases from 1.9 eV (InGaP) to 2.5 eV (InAlP) with increasing AlP mole fraction. The optical waveguide effect was also observed in InGaP/InGaAlP double heterostructure wafers.