Molecular Beam Epitaxial Growth of Undoped Low-Resistivity InxGa1-xP on GaAs at High Substrate Temperatures (500–580°C)

In x Ga1-x P epitaxial layers have been grown on (100) GaAs substrates by molecular beam epitaxy. Undoped layers of low resistivity (0.1–1.0 Ω·cm) with mirror smooth surfaces could be obtained for substrate temperatures of 500–580°C. Precise composition control was possible by regulating the In/Ga beam intensity ratio even at these high substrate temperatures. The X-ray measurement results show that these epitaxial layers have a uniform composition in the growth direction. A photoluminescence spectrum without deep emission was obtained.