Bismuth titanate, Bi 4 Ti 3 O 12 , thin films were grown on Ir/SiO 2 /Si and IrO 2 /SiO 2 /Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show P r = +15 µC/cm 2 and +12 µC/cm 2 , respectively.
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Jo et al. (1999) studied this question.
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