Electrical properties of rolled-up p-type Si/SiGe heterostructures

We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 1011 cm−2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 104 cm2/V s.