Measurement of the high-frequency differential capacitance associated with the surface space-charge region on evaporated polycrystalline layers of both PbTe and InSb has shown that, although qualitatively similar, the surface-state distribution on PbTe is approximately an order of magnitude larger than that on InSb. The quiescent surface charge is ~ 740 nc cm −2 on PbTe and ~96 nc cm −2 on InSb. Hall-voltage and resistivity measurements have been carried out on both materials and the apparent intrinsic behaviour of both p- and n-type PbTe films is shown to be the result of impurity compensation by surface states.
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Lile et al. (1969) studied this question.
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