The low frequency dielectric constant of PbTe was determined by measuring the barrier capacitances of PbTe abrupt junctions at about 100 kc/s and low temperatures. The junctions were made by alloying In to p -type base crystals or Ag-Te alloy to n -type crystals. The donor or acceptor density in crystals was controlled by heat treatment to range from 1.5×10 17 to 8.0×10 18 cm -3 . As the low frequency dielectric constant of PbTe a value of 400 was obtained, which is approximately constant in the temperature range from 4.2 to 130°K and in the frequency range from 10 to 150 kc/s. This high value of dielectric constant is sufficient to explain the large value of carrier mobility in PbTe at low temperatures.
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Kanai et al. (1963) studied this question.
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