Reverse bias transition capacitance measurements on alloy diodes of InSb at 78°K give values a factor of three times those calculated from normal diode theory. This result is in contrast to the reasonable agreement obtained for diodes of germanium and gallium arsenide in a comparable doping range. The experimental techniques are critically reviewed and an attempt made to assess the implications of the results.
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Lee et al. (1960) studied this question.
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