Answers are grounded in this paper and cite their sources.
Recent experimental evidence for the clustering of defects in neutron-irradiated semiconductors has led to a revived interest in the model proposed by Gossick (Ref. 2). This paper presents some theoretical extensions of Gossick's model, in which a simple defect model is used to describe some structure-sensitive properties. Poisson's equation and equations for carrier density have been solved for the model in the depletion approximation. The carrier-scattering mobility has been calculated from the Born approximation for scattering and the potential derived from Poisson's equation, and the results of the calculation are compared with some experiments.
No takes yet. Share an insight, caveat, or question.
T.M. Flanagan (1968) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: