Sublimation of Cadmium Telluride and Cadmium Selenide under a Vapour Pressure of one of their Components and the Equilibrium Form of Crystal Growth

The dependence of the sublimation velocity V ( g · s −1 · cm −2 ) of binary compounds A II B IV on the vapour pressure of one of their components p is investigated. For this purpose extensions are made to the theory of the kinetics of element sublimation including the mechanism of diffusion transport. The relationship V ∼ ( p ) −3 is derived. A method for growing single crystals by heating a mixture of small and large crystals of binary compounds AB under a vapour pressure of the component A is described and justified. The relationship α = exp (4 v 0 σ i / k T s r 1 ) is derived for the supersaturation (α) of the vapour phase at the crystal growth site by a generalization of the Thompson‐Gibbs relation. Equilibrium growth of single crystals has made it possible to determine the G I planes of cadmium telluride and selenide.