The electronic transitions E 0 , E 0 + Δ 0 , E 1 , and E 1 + Δ 1 of In 1‐x Ga x As y P 1‐y lattice matched to InP are studied by means of the electroreflectance method (ER). The samples grown using liquid phase epitaxy cover the range from y = 0 to 0.642. The three‐point method developed by Aspnes and Rowe is commonly used for the accurate determination of the critical point parameters from the ER spectra. In this study an extension of the three‐point method is suggested for the line profile analysis of the overlapping structures in the ER spectra originating at two adjacent critical points.
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Lahtinen et al. (1985) studied this question.
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