Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP

We present the first electroreflectance study of (Ga1−xAlx)0.47In0.53As lattice matched to InP (0≤x≤1) in the energy range 0.7–5.5 eV. The composition dependence of the E0 (fundamental band gap), E0+Δ0 (spin-orbit component), E1, E1+Δ1, E′0 , and E0+Δ′0 optical features, as well as the spin-orbit splitting parameters Δ0 and Δ1, have been determined. The variation of E0 with composition is in good agreement with recent photoluminescence measurements as well as with a band structure calculation. The bowing parameters of Δ0 and Δ1 will be discussed in terms of a generalized Van Vechten–Berolo–Woolley model.