Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique

Optical properties of undoped, n-type In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique are presented, including the temperature dependence of the band gap which can be described by the empirical relation Eg = 0.821−2.30×10−4 T−2.39×10−7 T2 eV. The photoluminescence emission intensity is found to decrease with increasing temperature. This temperature dependence of the intensity can be characterized by a nonradiative recombination process with an activation energy of Ea≃27 meV.