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A method is described for fabricating and evaluating metal–semiconductor (Schottky diode) samples for electroreflectance measurements over a wide spectral range. This technique has been used successfully on a variety of semiconductors. The completed samples have been cycled from 300 to 6 K maintaining very stable characteristics and allowing excellent reproducibility in electroreflectance data.
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A. A. Studna (1975) studied this question.
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