Photothermal infrared radiometry was used for monitoring the ion implantation in Si wafers implanted with phosphorus to doses in the range of 5×1010–1×1016 ions/cm2 at different implantation energies. Quantitative results on the sensitivity of the carrier plasma-dominated radiometric signal to the implantation dose and energy are presented and compared to those obtained using a commercial implantation monitoring instrument.
No takes yet. Share an insight, caveat, or question.
Salnick et al. (1997) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: