Photoacoustic optical and thermal characterization of Si and GaAs ion implanted layers

The values of the thermal conductivity and of the optical absorption coefficient of ion implanted Si and GaAs have been measured in a nondestructive way by photoacoustic measurements. The values obtained for Si are in good agreement with those found in literature, while no data have been found for ion implanted GaAs as a function of the implanted ions dose. The thermal conductivity value for the implanted layers is more than two orders of magnitude lower than the ones for the respective crystalline material. The implanted ion dose dependence of the two parameters is reported for GaAs.