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January 13, 2004Applied Physics Letters

Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy

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Authors

OMOleg MitrofanovUniversity College LondonMMMichael J. ManfraPurdue University West Lafayette

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Mitrofanov et al. (2004) studied this question.

synapsesocial.com/papers/6a87f1d7cb36de311aaa61c2https://doi.org/10.1063/1.1638878
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