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January 1, 1983Crystal Research and Technology

On the origin of free carriers in high‐conducting n‐GaN

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Authors

WSW. SeifertLund UniversityRFR. FranzheldInstitute of Inorganic Chemistry of the Slovak Academy of SciencesEBE. ButterÉcole Polytechnique Fédérale de Lausanne

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Seifert et al. (1983) studied this question.

synapsesocial.com/papers/6a87f1d970b8c970d976e743https://doi.org/10.1002/crat.2170180314
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