Defect states in electron irradiated InGaAsP

Capacitance transient spectroscopy has been used to study defect states in 1-MeV electron irradiated liquid phase epitaxial InGaAsP. No states were found in the unirradiated material. Irradiation resulted in one electron trap with an electron emission activation energy of 0.38 eV and two hole traps with hole emission activations of 0.29 and 0.46 eV. Annealing behavior and the broad shape of the deep level transient spectroscopy peaks suggest that defect properties are affected by local ordering and stoichiometry in the material. All three defects recover significantly at temperatures <200 °C.