Electron traps in GaAs1−xPx alloys

Deep level electron traps in vapor phase epitaxial GaAs1−xPx materials have been studied by transient capacitance spectroscopy. Light-emitting diodes and Schottky barriers with x=0, 0.3, 0.4, 0.65, 0.85, and x=1 have been used. Two traps with emission activation energies of ΔEe =0.16±0.02 eV and 0.27±0.02 eV have been found for all samples with x>0.3. A third level with ΔEe =0.87 eV is present in samples with x=0.3 and occasionally in diodes with x=0.4.