Electrical properties of dislocation trails in n‐Si

The deep level centers introduced by plastic deformation at 620 °C in n‐type silicon are quantitatively studied by the electron beam induced current and deep level transient spectroscopy techniques. It is shown that the most efficient deformation‐induced electrically active defects in Si are located in the dislocation trails. The deep level spectrum associated with these defects is obtained. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)