Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density

It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties of these extended defects has been studied. A complex annealing kinetics of defects in the dislocation trails is revealed by the EBIC and DLTS. It is shown that annealing at 800 °C essentially decreases the EBIC contrast of dislocation trails. The DLTS spectrum associated with dislocation trails is also found to disappear after such annealing. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)