The dependences of EBIC contrast on beam current and applied bias voltage are investigated for dislocations with different impurity atmosphere. It is shown that the results obtained may be explained taking into account the recombination via point defects in dislocation atmospheres both, for charged and uncharged dislocations. Qualitative models describing the recombination activity of dislocations in Si are proposed.
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Bondarenko et al. (1990) studied this question.
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