Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold

The effect of a specially chosen impurity (gold) on the electrical properties and structure of dislocations in silicon is investigated. Impurity gettering by dislocations considerably influences the structure and electrical properties of dislocations as well as the electrical properties of the silicon matrix. The complex of methods employed allow to draw conclusions about the possible mechanisms of dislocation-impurity interactions.