A number of analog devices has exhibited permanent single event failure when exposed to heavy ions of LETs 26.6 MeV cm/sup 2//mg or higher. Single event gate rupture (SEGR) was uncovered to be the failure mode in several analog circuits using failure analysis tools and circuit modeling. A new approach to assessing the risk of SEGR for a system design will be presented which strongly depends on angles near normal incident and on the critical electric field where SEGR occurs.
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Lum et al. (2000) studied this question.
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