Transient luminescence spectroscopy reveals that recombining excitons in a new, highly strained II-VI compound semiconductor superlattice CdTe-ZnTe are strongly localized at low lattice temperatures. We argue that such behavior is expected in a superlattice system with small valenceband offset under large lattice-mismatch strain when the influence of monolayer thickness variations (finite interface roughness) is considered.
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Hefetz et al. (1986) studied this question.
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