Liquid-helium temperature transport and magnetotransport measurements on n-CdTe grown by molecular beam epitaxy on p-InSb substrates have demonstrated the presence of a quasi-two-dimensional electron gas in the InSb at the InSb/CdTe interface. The electron density and mobility in the channel can be varied by back gating.
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Zheng et al. (1986) studied this question.
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